A Review of Different Techniques for Improving the Performance of Amorphous Silicon based Solar Cells

  • Ahmed Idda Laboratory of Physic and Semiconductor Devices, Physics Department, University of Bechar, Algeria
  • Leila Ayat Laboratory of Physic and Semiconductor Devices, Physics Department, University of Bechar, Algeria
  • Said Bentouba LDDI Laboratory, Faculty of Science and Technology, University of Adrar, Algeria
Keywords: Amorphous Silicon, p-i-n Solar cells, Performance, a-Si:H alloys, Efficiency

Abstract

Hydrogeneted amorphous silicon (a-Si:H) based solar cells are promising candidates for future developments in the photovoltaic industry. In fact, amorphous silicon technology offers significant advantages including low cost fabrication and possibility to deposition on flexible substrat as well as low temperature fabrication. Much progress has been made since the first single junction cell in amorphous silicon made in 1976 by Carlson and Wronski. However, the performance of the solar cells based on a-Si:H is limited by the high defect density and degradation induced by exposure to light, or Staebler-Wronski effect. To become competitive, the performance of the solar cells based on a-Si:H must be improved. In order to improve the performance of a-Si:H solar cells, much research is directed to optimization techniques. The improvement in performance is therefore based on the optimization of the different layers of the solar cell, in particular, the window layer and the absorber layer (intrinsic). The aim of this work is to give an overview on the different techniques and strategies that is used to improve the performance of solar cell. This work is therefore focus in three main areas: first, optimization of window layer, in particular, the p/i interface using wide band gap alloys such as a-SiC:H, second development of high quality absorber layer using band gap engineering, and alloys such as a-SiGe:H. last, optimizing n-type layer and i/n interface.

References

R.E. Schropp, "Efficiency Optimization Techniques for Amorphous Silicon Solar Cells." Solid State Phenomena. Vol. 44. Trans Tech Publications Ltd, 1995.

M. A. Green, “third generation photovoltaics: Ultra‐high conversion efficiency at low cost”, Progress in Photovoltaics: Research and Applications, vol. 9, no 2, pp. 123-135, 2001.

M. Stuckelberger, et al. Progress in solar cells from hydrogenated amorphous silicon. Renewable and Sustainable Energy Reviews , vol. 76, pp. 1497-1523, 2017, https://doi.org/10.1016/j.rser.2016.11.190

Tahiri, F. Bekraoui, F. Boussaid I, Ouledali, O. Harrouz A. Direct Torque Control (DTC) SVM Predictive of a PMSM Powered by a photovoltaic source. Algerian Journal of Renewable Energy and Sustainable Development, 2019, 1(1),1-7. https://doi.org/10.46657/ajresd.2019.1.1.1

A. Shah. Ed., “Thin-Film Silicon Solar Cells,” EPFL Press; 2010.

IEC, “Photovoltaic Devices—Part 3: Measurement Principles for Terrestrial Photovoltaic (Pv) Solar Devices With Reference Spectral Irradiance Data”, International Stand., IEC 60904–3, 2nd ed., 2006.

M. A. Green, et al, “Solar cell efficiency tables (version 49)”, Prog Photovolt Res Appl, vol 2-25(1), pp. 3–13. 2017.

T. Yoshihisa, et al. “Window effects of hydrogenated amorphous silicon carbide in a pin a-Si solar cell.” Japanese Journal of Applied Physics, vol. 21, no S1, pp. 297, 1982.

L. Changwoo, et al , Two-dimensional Computer Modeling of Single Junction a-Si:H Solar Cells, Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE, 2010.

K. W. Mitchell, K. J Touryan, “Amorphous Silicon Alloys for Solar Cells”, Annual Review of Energy, 1985, 10: 1,, 1985 doi: https://doi.org/10.1146/annurev.eg.10.110185.000245

I.K Mohammed, et al, “Amorphous Silicon Single-Junction Thin-Film Solar Cell Exceeding 10% Efficiency by Design Optimization”, Hindawi Publishing Corporation International Journal of Photoenergy, Volume 2012, Article ID 460919, 2012. doi:10.1155/2012/460919

L. Yang and L. F. Chen, “The effect of H2 dilution on the stability of a-Si:H based solar cells,” Proceedings Materials Research Society conference vol. 336, pp. 669, 1994.

B. Rech, et al, “Improvement in stabilized efficiency of a-Si:H solar cells through optimized p/i-interface layers,” Solar Energy Materials and Solar Cells, vol. 41/42, pp. 475, 1996.

R. Martins, et al, “Improvement of a-Si:H device stability and performances by proper design of the interfaces, “ Journal of Non-Crystalline Solids vol. 266/269 , pp.1094±1098, 2000.

G. Ahmad, et al, “Band Offset Reduction at Defect-Rich p/i Interface Through a Wide Bandgap a-SiO:H Buffer Layer,” IEEE Journal of Photovoltaics, 2156-3381, 2016. doi:10.1109/jphotov.2016.2642644

Badoud, A. Bond Graph Model for Fault Detection of Partial Shaded PV Array Considering Different Module Connection Schemes and Effects of Bypass Diodes. Algerian Journal of Renewable Energy and Sustainable Development, 2019, 1(1),41-59. https://doi.org/10.46657/ajresd.2019.1.1.5

S. Yamanaka, et al, “investigation of the optimum design for amorphous silicon based solar cells.”, Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference, pp. 160-165, 1988.

D. Xunming and E, Schiff, “Amorphous Silicon Based Solar Cells in Handbook of Photovoltaic Science and Engineering,” Antonio Luque and Steven Hegedus, editors (John Wiley & Sons, Chichester), pp. 505 – 565, 2003.

A. Kim, et al, “Characteristics of a-SiGe:H Solar Cell with various Thickness Ratio of a-Si:H/a-SiGe:H Layer in the Intrinsic Layer,” Mol. Cryst. Liq. Cryst., Vol. 586, pp. 69–75, 2013. doi:10.1080/15421406.2013.851514.

A. Idda, et al. "Improving the Performance of Hydrogenated Amorphous Silicon Solar Cell Using a-SiGe: H Alloy." Journal of Ovonic Research vol. 15.5, pp. 276, 2019.

T. Grundler, et al, "N‐type hydrogenated amorphous silicon oxide containing a microcrystalline silicon phase as an intermediate reflector in silicon thin film solar cells." physica status solidi c vol. 7.34 , pp. 1085-1088, 2010.

P.W. Chen , et al, “Development of wider bandgap n-type a-SiO x: H and μc-SiO x: H as both doped and intermediate reflecting layer for a-Si: H/a-Si 1-x Gex: H tandem solar cells”, Electronic Materials Letters, vol. 12(4), pp. 445, 2016. doi: 10.1007/s13391-016-4004-1

S. Mandal, et al. “Development of a novel fluorinated n-nc-SiO:H material for solar cell application”, Materials Chemistry and Physics, vol. 157, pp. 130, 2015 doi: https://doi.org/10.1016/j.matchemphys.2015.03.027

M. Hishid, et al. “Designing band offset of a-SiO: H solar cells for very high open-circuit voltage (1.06 V) by adjusting band gap of p–i–n junction,” Japanese Journal of Applied Physics, vol. 53(9), pp. 092301, 2014, doi: https://iopscience.iop.org › JJAP.53.092301.

Published
2019-12-15
How to Cite
Idda , A., Ayat , L., & Bentouba, S. (2019). A Review of Different Techniques for Improving the Performance of Amorphous Silicon based Solar Cells . Algerian Journal of Renewable Energy and Sustainable Development, 1(02), 172-181. Retrieved from https://ajresd.univ-adrar.edu.dz/index.php?journal=AJRESD&page=article&op=view&path[]=45
Section
Articles